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Si7810DN
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A)
?
?
Halogen-free Option Available
TrenchFET ? Power MOSFET
100
0.062 at V GS = 10 V
0.084 at V GS = 6 V
5.4
4.6
?
?
New Low Thermal Resistance
PowerPAK ? 1212-8 Package with Low
RoHS
COMPLIANT
1.07 mm Profile
? PWM Optimized
APPLICATIONS
? Primary Side Switch
PowerPAK 1212-8
? In-Rush Current Limiter
3.30 mm
1
S
S
3.30 mm
D
2
3
S
G
4
D
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free)
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwi se noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
100
± 20
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
T A = 25 °C
T A = 70 °C
I D
5.4
4.3
3.4
2.8
A
Pulsed Drain Current
I DM
20
Continuous Source Current (Diode Conduction) a
I S
3.2
1.3
A
Single Avalanche Current
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
I AS
E AS
19
18
mJ
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
3.8
2.0
1.5
0.8
W
Soldering Recommendations
Operating Junction and Storage Temperature Range
b,c
T J , T stg
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
t ≤ 10 s
Steady State
R thJA
26
65
33
81
°C/W
Maximum Junction-to-Case (Drain) Steady State R thJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
www.vishay.com
1
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